摘要
为了得到标识清楚且不损伤锗晶片特性的激光标识,借助于正交实验设计的方法,对激光平均输出功率值、脉冲激光频率和标刻速度对晶片进行了DOE(正交实验设计)和极差分析。通过极差分析得到4个影响因素的主次关系为激光发生器功率值>标刻速度>激光频率>空白(其余因素)。得到标刻深度的最佳配方为标刻速度200 mm/s,激光发生器平均输出功率值46%,脉冲激光频率为18 kHz。此时标刻深度为230μm。
In order to obtain laser labeling that is clear and does not damage the characteristics of the germanium wafer,this paper uses the orthogonal experimental design method to perform DOE and range analysis on the average output power value of the laser,pulse laser frequency,and marking speed of the chip.Through range analysis,the primary and secondary relationships of the four influencing factors were obtained as follows:laser generator power value>marking speed>laser frequency>blank(other factors).The optimal formula for obtaining the marking depth is the marking speed of 200 mm/s,the average output power of the laser generator is 46%,and the pulse laser frequency is 18 kHz.At this point,the marking depth is 230μm.
作者
康洪亮
KANG Hongliang(The 46^(th) Research Institute of CETC,Tianjin 300220,China)
出处
《电子工业专用设备》
2024年第4期21-23,共3页
Equipment for Electronic Products Manufacturing
关键词
锗片
激光标识
正交实验
输出功率
Germanium wafer
Laser labeling
Orthogonal experimental design
Output power
