摘要
半导体碳化硅(4H-SiC)材料具有硬度高、脆性大、化学性质稳定等特点,一般使用化学机械抛光工艺来加工4H-SiC以获得超光滑平坦表面。湿法氧化作为单晶4H-SiC化学机械抛光的重要过程,直接影响着化学机械抛光的速率和表面质量。本文综述了目前单晶4H-SiC湿法氧化的研究现状,讨论了4H-SiC湿法氧化工艺所选用的氧化剂,如KMnO_(4)、H_(2)O_(2)、K_(2)S_(2)O_(8)等。在此基础上,进一步总结了常用的氧化增效方法,如光催化辅助氧化、电化学氧化、芬顿反应等,并从理论计算的角度分析了单晶4H-SiC湿法氧化的机理,最后展望了4H-SiC湿法氧化未来的研究方向。
Semiconducting silicon carbide(4H-SiC)exhibits characteristics of high hardness,notable brittleness,and excellent chemical stability.The commonly employed technique for achieving an ultra-smooth and flat surface is chemical mechanical polishing(CMP),which is utilized to process the 4H-SiC surface.Wet oxidation,as an important process of chemical-mechanical polishing of single-crystal 4H-SiC,directly affects the rate and surface quality of CMP.This paper provides a comprehensive overview of the current research status of wet oxidation of single-crystal 4H-SiC.It discusses the oxidants used in the wet oxidation of 4H-SiC,such as KMnO_(4),H_(2)O_(2),K_(2)S_(2)O_(8).Based on this,it further summarizes commonly employed oxidation-enhancement methods,including photocatalytic-assisted oxidation,electrochemical oxidation,and Fenton reaction.The mechanism of wet oxidation of single-crystal 4H-SiC is analyzed from the aspect of theoretical calculation,and the future research direction of wet oxidation of 4H-SiC is proposed.
作者
鲁雪松
王万堂
王蓉
杨德仁
皮孝东
LU Xuesong;WANG Wantang;WANG Rong;YANG Deren;PI Xiaodong(State Key Laboratory of Silicon and Advanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China;College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China)
出处
《人工晶体学报》
CAS
北大核心
2024年第2期181-193,共13页
Journal of Synthetic Crystals
基金
国家自然科学基金(62274143,62204216)
浙江省“尖兵”“领雁”研发计划(2022C01021,2023C01010)
杭州市领军型创新创业引进培育计划(TD2022012)
中央高校基本科研经费(226-2022-00200)。
关键词
碳化硅
半导体
加工
湿法氧化
化学机械抛光
材料去除率
silicon carbide
semiconductor
processing
wet oxidation
chemical mechanical polishing
material remove rate
