摘要
在实际抛光过程中,磨粒会以不同的抛光速度与抛光深度对工件进行抛光,当加工参数改变时,抛光产生的力,切屑的形式及工件内部产生的缺陷不同,通过分子动力学仿真,建立纳米尺度下的两体抛光单晶铜模型,探究在抛光过程中深度变化对单晶铜的影响。结果表明:抛光深度对切向力的影响大于法向力,且随着抛光深度的增加,抛光力稳定性降低;抛光深度对侧向力稳定性的影响最大,随着抛光深度的增加,切屑的侧流减小,但增加了工件表面的滑移现象,使工件表面质量降低。
In the actual polishing process,the abrasive polishes a workpiece at different polishing speeds and different polishing depths,and when these processing parameters are changed,polishing forces,the form of chips and defects of generated inside the workpiece are different.Due to molecular dynamics simulation,a model of two-body polished single-crystal copper with the nanoscale is established,so as to investigate the effect of depth changes on single crystal copper in the polishing process.It is found that the effect of polishing depths on the tangential force is greater than the normal force,and stabilities of polishing force decrease with the increase of polishing depths,which have the greatest effect on the stability of lateral forces.The increase of polishing depths can reduce the lateral flow of chips and can increase slip phenomena on the workpiece surface,and making the surface quality of the workpiece deteriorates.
作者
王桂莲
朱文达
冯志坚
张善青
WANG Guilian;ZHU Wenda;FENG Zhijian;ZHANG Shanqing(Tianjin Key Laboratory for Advanced Mechatronic System Design and Intelligent Control,Tianjin University of Technology,Tianjin 300384,China;National Demonstration Center for Experimental Mechanical and Electrical Engineering Education,Tianjin University of Technology,Tianjin 300384,China)
出处
《天津理工大学学报》
2023年第5期1-8,共8页
Journal of Tianjin University of Technology
基金
天津市自然科学基金(18JCYBJC20100)。
关键词
单晶铜
抛光深度
分子动力学
抛光力
single crystal copper
polishing depth
molecular dynamics
polishing force
