摘要
Deep-ultraviolet(DUV)phototransistors have shown great potential applications in UV imaging,artificial intelligence,and wearable optoelectronics.Among a large number of wide bandgap semiconductors,the quasi-two-dimensionalβ-Ga_(2)O_(3) is considered as an ideal candidate for DUV photodetector applications.Herein,we report a high responsivity(R)and fully flexible Ta-dopedβ-Ga_(2)O_(3) DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32×10^(6) A/W,a large detectivity of 5.68×10^(14) Jones,a great photo-to-dark current ratio of 1.10×10^(10)%,a high external quantum efficiency of 6.60×10^(8)%,and an ultra-fast response time of~3.50 ms.Besides,the flexible Ta-dopedβ-Ga_(2)O_(3) device also displays high reliability and mechanical flexibility that can sustain well after over 1×10^(4) bending cycles.Moreover,high-contrast imaging of UV light was obtained on the flexible DUV detector arrays,which can be efficiently trained and recognized by an artificial neural network.Our findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexibleβ-Ga_(2)O_(3) DUV phototransistors,providing an inspiration for the future work in artificial intelligence and bionic robot fields.
基金
supported by the National Natural Science Foundation of China (Nos.62027818,61874034,12175298,and 51861135105)
Natural Science Foundation of Shanghai (Nos.18ZR1405000 and 20ZR1464100)
the National Natural Science Foundation of China (No.51972319)
the Science and Technology Commission of Shanghai Municipality (No.19520744400).
