Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”

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摘要 We are sorry for the misuploading of Fig.1(a)as Fig.2(b),which makes Fig.2(b)the same as Fig.1(a).The correct Fig.2(b)is presented below.It should be noted that the replacement of Fig.2(b)does not influence the discussion and conclusion.

作者 Xiao Chu Jia-Qian Kang Ya Hong Guo-Dong Zhu Shou-Ke Yan Xue-Yun Wang Xiao-Li Sun

机构地区 State Key Laboratory of Chemical Resource Engineering School of Aerospace Engineering Department of Materials Science Key Laboratory of Rubber-Plastics

出处《Chinese Journal of Polymer Science》 SCIE EI CAS CSCD 2022年第12期1706-1706,共1页 高分子科学（英文版）

关键词 VOLATILE CONCLUSION REPLACEMENT

分类号 TP333 [自动化与计算机技术—计算机系统结构] G23 [文化科学]

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Chinese Journal of Polymer Science

2022年第12期

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Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”

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