摘要
Extreme ultraviolet lithography(EUVL)has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication.The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing(HVM),together with other technologies such as photoresist and mask.Historically,both theoretical studies and experiments have clearly indicated that the CO 2 laser-produced plasma(LPP)system is a promising solution for EUVL source,able to realize high conversion efficiency(CE)and output power.Currently,ASML’s NXE:3400B EUV scanner configuring CO_(2) LPP source sys-tem has been installed and operated at chipmaker customers.Mean-while,other research teams have made different progresses in the development of LPP EUV sources.However,in their technologies,some critical areas need to be further improved to meet the requirements of 5 nm node and below.Critically needed improvements include higher laser power,stable droplet generation system and longer collector life-time.In this paper,we describe the performance characteristics of the laser system,droplet generator and mirror collector for different EUV sources,and also the new development results.
出处
《Chip》
2022年第3期50-60,共11页
芯片（英文）
基金
supported by the National Key R&D Program of China(2019YFB1704600).
