摘要
Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of graphene.Here,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical microscope.This was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface differ.We can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical images.In addition,this characterization method causes no obvious damage to the Pt substrate and graphene.Moreover,it does not affect the recycling of the substrate or the subsequent characterization or application of graphene.Our study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.
对石墨烯质量的高效大规模的无损检测是推进其生长研究和实际应用的关键.在这里,我们报告了一种非常简单的方法:用普通的光学显微镜来直接观测生长在铂上的石墨烯的形貌和缺陷.该工艺通过亚甲基蓝(MB)对在铂上的石墨烯进行修饰来实现.由于石墨烯和铂表面的化学活性不同,MB在石墨烯和铂表面的吸附和反应也不同.通过对比光学图像中的颜色,我们可以观测到石墨烯晶畴和缺陷的分布.此外,该表征方法对铂衬底和石墨烯均无明显损伤,不影响衬底的再利用和石墨烯的后续表征或应用.我们的工作为大规模检测生长在铂上的石墨烯的质量提供了一种非破坏性的方法,也为其他检测二维材料的质量和掺杂情况提供了参考.
作者
He Kang
Yanhui Zhang
Yun Wu
Shike Hu
Jing Li
Zhiying Chen
Yanping Sui
Shuang Wang
Sunwen Zhao
Runhan Xiao
Guanghui Yu
Songang Peng
Zhi Jin
Xinyu Liu
康鹤;张燕辉;吴云;胡诗珂;李晶;陈志蓥;隋妍萍;王爽;赵孙文;肖润涵;于广辉;彭松昂;金智;刘新宇(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Device Institute,Nanjing 210016,China;Microwave Devices and Integrated Circuits Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
基金
financially supported by the National Defense Technology Innovation Special Zone Project, the National Natural Science Foundation of China (51402342)
the Science and Technology Commission of Shanghai Municipality (20501130200)。
