摘要
为了验证外延材料制备工艺试验的正确性,减少GaSb衬底对红外光的吸收,同时提升探测器的可靠性和长期稳定性,需要对Ⅱ类超晶格红外探测器的GaSb衬底进行减薄处理。采用机械抛光法和机械化学抛光法实现Ⅱ类超晶格探测器的GaSb衬底背面减薄,最后利用专用腐蚀液腐蚀的方法将GaSb衬底全部去除,使Ⅱ类超晶格材料完全露出。扫描电镜测试表明,超晶格材料腐蚀阻挡层能起到较好的阻挡作用,材料表面光滑,衬底无残留。探测器性能测试结果表明,减薄后的探测器芯片性能未发生变化。
In order to verify the correctness of the epitaxial material preparation process test,reduce the absorption of infrared light by the GaSb substrate,and at the same time improve the reliability and long-term stability of the detector,the GaSb substrate of the type-Ⅱsuperlattice infrared detector needs to be thinned.The backside of the GaSb substrate of the type-Ⅱsuperlattice detector is thinned by mechanical polishing and chemical mechanical polishing.Finally,the GaSb substrate is completely removed by etching with a special etching liquid,and the type-Ⅱsuperlattice material is completely exposed.Scanning electron microscope experiment shows that the barrier layer of the superlattice material can play a good blocking role,the surface of the material is smooth,and the substrate has no residue.The detector performance test results show that the performance of the thinned detector chip does not change.
作者
李春领
封雪
邢伟荣
温涛
周朋
LI Chun-ling;FENG Xue;XING Wei-rong;WEN Tao;ZHOU Peng(North China Research Institute of Electro-Optics,Beijing 100015,China)
出处
《红外》
CAS
2022年第9期10-14,共5页
Infrared
