摘要
与n-on-p材料相比,p-on-n材料具有更低的暗电流和更高的工作温度,更适于长波以及高温工作碲镉汞红外焦平面器件。介绍了法国Sofradir公司、美国Raytheon Vision Systems公司以及国内的华北光电技术研究所和昆明物理研究所在长波p-on-n器件上的研究进展。
Compared with n-on-p materials,p-on-n materials have lower dark current and higher operating temperature,and are more suitable for long wave and high temperature HgCdTe infrared focal plane devices.The research progress on long wave p-on-n devices by French Sofradir Company,American Raytheon Vision Systems Company,North China Research Institute of Electro-Optics and Kunming Institute of Physics is introduced.
作者
郝斐
赵硕
杨海燕
胡易林
HAO Fei;ZHAO Shuo;YANG Hai-yan;Hu Yi-lin(North China Research Institute of Electro-Optics, Beijing 100015, China)
出处
《红外》
CAS
2022年第4期1-8,共8页
Infrared
