摘要
采用原子层沉积(ALD)方法在硅衬底上沉积了氧化铪(HfO_(2))薄膜,对其进行不同时间的微波退火(MWA)。采用X射线衍射(XRD)、拉曼光谱(Raman)、原子力显微镜(AFM)、紫外可见光谱(UV-Vis)、椭偏仪(SE)和阻抗分析仪对薄膜的物相结构、形貌和光电性能进行了表征,研究了微波退火时间对薄膜结构、光学和电学性能的影响。结果表明:沉积态的HfO_(2)薄膜具有非晶态性质;当微波退火时间从5 min延长至20 min时,HfO_(2)薄膜的折射率几乎不变,结晶性增强,表面粗糙度降低,介电常数减小。
Hafnium oxide(HfO_(2))thin films were deposited on a silicon substrate using atomic layer deposition(ALD),and microwave annealing(MWA)was performed for different time.X-ray diffraction(XRD),Raman spectroscopy(Raman),atomic force microscopy(AFM),ultraviolet-visible spectroscopy(UV-Vis),ellipsometer(SE)and impedance analyzer were used to characterize the phase structure,morphology,optical and electrical properties of the films.The effects of different microwave annealing time on the structure,optical and electrical properties of the films were studied in detail.The results show that the as-deposited HfO_(2)film is amorphous.When the microwave annealing time extends from 5 min to 20 min,the crystallinity of the HfO_(2)film increases,the surface roughness decreases,and the dielectric constant decreases.In addition,the refractive index of the HfO_(2)film hardly changes with the prolongation of microwave annealing time.
作者
赵恒利
杨培志
李赛
周启航
Zhao Hengli;Yang Peizhi;Li Sai;Zhou Qihang(Key Laboratory of Advanced Technique&Preparation for Renewable Energy Materials,Ministry of Education,Yunnan Normal University,Kunming 650500,China;School of Physics and Electronic Science,Chuxiong Normal University,Chuxiong 675000,China)
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2022年第4期1325-1331,共7页
Rare Metal Materials and Engineering
基金
国家自然科学基金(U1802257)
云南省高校科技创新团队支持计划。
关键词
HfO_(2)薄膜
原子层沉积
微波退火时间
折射率
介电常数
HfO_(2)thin films
atomic layer deposition
microwave annealing time
refractive index
dielectric constant
