摘要
Long-lasting constant loading commonly exists in silicon-based microelectronic contact,as well as the chemical mechanical polishing area.In this work,the stress relaxation analysis of single crystal silicon coated with an amorphous SiO_(2) film is performed by varying the maximum indentation depth using molecular dynamics simulation.It is found that during holding,the applied indentation force declines sharply at the beginning and then steadily towards the end of the holding period.The stress relaxation amount of bilayer composites increases as the maximum indentation depth increases.It is also found that the deformation features of SiO_(2) film and silicon substrate during holding are inherited from the loading process.The SiO_(2) film during holding is further densified when the maximum indentation depth is equal to or less than a certain value(5.5 nm for the 0.8-nm film).The amount of generated phases and phase distributions of silicon substrate during holding are affected by the plastic deformation of silicon during loading.
基金
The authors thank Zhi Chen for his help in radial distribution function.This study was supported by the National Natural Science Foundation of China(Grant Numbers 51375364,51475359,and 51505479)
Natural Science Foundation of Jiangsu Province of China(BK20150184).
