摘要
采用反应直流磁控溅射法,通过调控溅射过程中的氩氧比,在石英玻璃衬底上制备了氧化钒薄膜,研究了溅射气氛及后处理条件对其微结构与电学性能的影响。经450和500℃退火,薄膜中易形成VO_(2),而550℃退火时薄膜中会形成大量非4价的钒氧化物。薄膜在较高温度500℃下退火时结晶度增加,但薄膜颗粒之间的间隙更为明显,导致电阻率显著提高;同时其电阻率-温度曲线的热滞回线宽度较窄,在加热过程中相转变温度较高。当氩氧比中氧含量增加时,沉积的VO_(2)薄膜中生成了少量非4价的钒氧化物。结果表明,反应磁控溅射法制备的氧化钒薄膜的微结构、电阻率、相变温度等特性与氩氧比和后退火温度密切相关。
Vanadium oxide films were prepared on quartz glass substrates by reactive DC magnetron sputtering by adjusting the argon-oxygen flowing ratio in sputtering process,and the effect of sputtering atmosphere and post-treatment conditions on micro-structures and electrical properties of the films were investigated.Being annealed under 450 and 500℃is beneficial to the formation of VO_(2),nevertheless,a large number of non-4-valent vanadium oxides appear in the films when the annealing temperature increases to 550℃.The crystallization of the films increases after they were annealed at 500℃,however,the cracks between the particles of films become more obvious,resulting in a significant increase in the resistivity of the films;meanwhile,the width of thermal hysteresis loop of the resistivity-temperature curve is narrower,and the phase transition temperature is higher during the heating process.A small amount of non-4-valent vanadium oxides were formed in the deposited VO_(2) films when the oxygen content in the argon-oxygen mixtures increases.The results show that the micro-structure,resistivity and phase transition temperature of VO_(2) films prepared by reactive magnetron sputtering are closely associated with the argon-oxygen ratio of sputtering atmosphere and post-annealing.
作者
高振雨
刘哲
马紫腾
郭佳成
刘雍
魏长伟
何春清
GAO Zhenyu;LIU Zhe;MA Ziteng;GUO Jiacheng;LIU Yong;WEI Changwei;HE Chunqing(Key Lab.of Nuclear Soild State Physics,School of Physics and Technol.,Wuhan University,Wuhan 430072,CHN;Wuhan Chamtop New Materials Co.Ltd.,Wuhan 430000,CHN)
出处
《半导体光电》
北大核心
2021年第3期353-357,363,共6页
Semiconductor Optoelectronics
基金
国家重点研发计划项目(2019YFA0210003)
国家自然科学基金项目(12075172,12074291,11875209)。
关键词
磁控溅射
退火
氩氧比
氧化钒
相变
magnetron sputtering
annealing
argon-oxygen ratio
vanadium oxide
phase change
