摘要
Spectral resolution effects on the lineshape of photoreflectance(PR)spectroscopy is experimentally investigated.PR measurements are performed on HgCdTe epilayer and InAs/GaAs quantum dot(QD)low-dimensional samples at low temperatures in a spectral resolution range from 8 to 0.5meV.The results indicate that the resolution affects not only the identification of narrow PR features,but also the determination of critical-point energies of identified PR features,and a spectral resolution of as high as 0.5meV may be necessary for low-dimensional semiconductors.The spectral resolution is indeed a crucial parameter,for which the step-scan Fourier transform infrared spectrometer-based PR technique is preferable.
基金
Supported by the Science and Technology Commission of Shanghai Municipality(STCSM)under Grant Nos 09JC1415600 and 10QA1407800
and the National Natural Science Foundation of China under Grant No 10927404.
