摘要
从传感器的响应及电子扩散原理分析了影响CMOS阵列串扰特性的几个主要因素。选择了锗、硅、砷化镓这几种常见的光电材料,分析并比较了材料特性对CMOS阵列串扰特性的影响。具体分析了三种光电材料在各自光谱响应峰值波长下,不同入射条件和结构参数对应电串扰的输出情况。结果表明:在相同条件下,锗材料制作的CMOS阵列具有最大的电串扰输出,在结构条件一致的前提下,入射光的功率在200μW时,锗材料CMOS阵列的串扰比硅和砷化镓材料分别高了58.97 mV、115.81 mV。结构参数对不同材料CMOS阵列具有相同的影响规律,但是锗材料CMOS的串扰变化最为显著,在其他参数不变的情况下,耗尽层宽度为1μm时,锗材料CMOS的串扰输出比硅和砷化镓材料的分别高了56.67mV、121.84 mV。分析结果为CMOS阵列材料的选择及串扰抑制技术提供了参考数据。
Based on the sensor response and the electronic diffusion principle,several main factors that should affect the crosstalk characteristics of CMOS array are analyzed. Several common optoelectronic materials,such as germanium,silicon,and gallium arsenide,are selected to analyze the influence of material properties on the crosstalk characteristics of CMOS arrays. The crosstalk voltages of the devices with different material are calculated under different incident conditions.The results show that under the same conditions,the CMOS array made of germanium material has the largest electrical crosstalk output. When the structural conditions are consistent and the power of the incident light is 200 μW,the crosstalk of germanium material CMOS array is 58.97 mV and 115.81 m V higher than which made of silicon and gallium arsenide materials,respectively. Structural parameters have the same influence rules on CMOS arrays of different materials,but the crosstalk changes of germanium material CMOS are the most significant. While other parameters remain unchanged,when the depletion layer width is 1 μm,the crosstalk output of germanium material CMOS is 56.67 mV and 121.84 mV higher than which made of silicon and gallium arsenide materials,respectively. The analysis results provide theoretical reference data for optimization and crosstalk processing of CMOS array in practice.
作者
边琦
戚磊
唐善发
张蓉竹
BIAN Qi;QI Lei;TANG Shan-fa;ZHANG Rong-zhu(College of Electronics and Information Engineering,Sichuan University,Chengdu 610065,China)
出处
《光学与光电技术》
2021年第3期13-19,共7页
Optics & Optoelectronic Technology
基金
四川省重大科技专项课题(2019ZDZX0038)。
