摘要
新一代半导体材料GaN相比于Si、GaAs等材料,具有禁带宽、击穿场强高、热稳定性优异等特性,在宽带功放的设计中被广泛使用。基于CREE公司的两款GaN功率芯片进行级联,匹配电路为集中元件和分布元件混合,采用负反馈技术提高带宽,RC并联网络提高稳定性,设计了一款20 MHz^520 MHz的宽带功放。利用ADS软件对芯片模型和匹配电路进行优化仿真和实际调试,在20 MHz^520 MHz频段内,功放模块饱和输出功率大于9 W,增益大于29.5 dB,漏极效率高于40%,带内平坦度为±0.7 dB。
GaN,as the new generation semiconductor material,has much wider forbidden bandwidth,higher breakdown voltage,more excellent thermal stability than Si and GaAs,and thus is widely used in the broadband power amplifier design.Based on two GaN RF dies of CREE company are cascaded and the matching circuit is a mixture of centralized and distributed components,a broadband power amplifier is designed in the 20 MHz^520 MHz frequency by using feedback technology to improve band width,RC parallel network to improve stability and micro-strip hybrid matching circuit.The die model and matching circuit are optimized and debugged by the ADS software.In the 20 MHz^520 MHz frequency band,the saturation output power of this power amplifier is more than 9 W,the gain is more than 29.5 dB,the drain efficiency is higher than 40%and the gain flatness is±0.7 dB.
作者
李贺
梁坤
刘敏
何颖
张晖
Li He;Liang Kun;Liu Min;He Ying;Zhang Hui(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China)
出处
《电子技术应用》
2020年第8期1-4,8,共5页
Application of Electronic Technique
关键词
GAN
宽带功放
负反馈
饱和输出功率
增益
漏极效率
GaN
broadband power amplifiers
feedback
saturation output power
gain
drain efficiency
