摘要
以高纯超细CdTe粉体为原料,采用真空热压法,对工艺进行正交化实验设计,优化工艺参数,得到制备高致密度,晶粒度均匀CdTe靶材的工艺制度。以烧结温度、保温时间、烧结压力为因素,设计L9(3~4)正交实验表,对正交化实验数据结果进行极差和方差分析,确定了制备工艺参数对靶材致密度的影响程度:保温时间的改变对靶材致密度影响显著,其方差检验统计量F值达到86.25,靶材的致密度随保温时间的增加而增加,但超过一定时间后,会出现反致密化现象;烧结温度具有一定的影响;而烧结压力对其影响较小,其F值仅为2.5。正交化实验分析建议给出了CdTe靶材最佳制备工艺条件为:烧结温度580℃、保温时间60 min、烧结压力33 MPa。X射线衍射仪(XRD),扫描电子显微镜(SEM)和阿基米德排水法的检测结果表明:采用最优工艺制备得到了高质量的CdTe靶材,其相结构相比原料粉体不发生改变,靶材的晶粒度均匀,致密度达到99.4%。
The vacuum hot pressing process system of high density and uniform grain size CdTe sputter targets was determined by orthogonal experiments. Sintering temperature, holding time and sintering pressure were as the three factors of L9(3~4) orthogonal experiments table. Range analysis and variance analysis were employed to deal with the orthogonal experiment results. It showed that holding time was the major factor affecting the sputter target′s density with the variance of unit weight F=86.25, the density of the target increased with the raising of holding time, but the phenomenon of anti-densification will occur after a certain period of time, sintering temperature with certain influence, while sintering pressure with little effecting on it and the F=2.5. The optimal technological condition was indicated with sintering temperature of 580 ℃, holding time of 60 min and sintering pressure of 33 MPa. The results of X-ray diffraction(XRD), scanning electron microscopy(SEM) and Archimedes drainage method showed that the high quality CdTe target was prepared by the optimum process, the phase structure of the target was unchanged comparing with the raw powder, the grain size of the target was uniform and its density reachesd 99.4%.
作者
李思钦
储茂友
王星明
张碧田
Li Siqin;Chu Maoyou;Wang Xingming;Zhang Bitian(Minings Metallurgy&Materials Research Department,General Research Institute for Nonferrous Metals,Beijing 100088,China)
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2020年第2期215-219,共5页
Chinese Journal of Rare Metals
基金
国家自然科学基金项目(51674035)资助。
