摘要
GaAs multiple concentric nano-ring structures(CNRs)are prepared with multistep crystallization procedures by droplets epitaxy on GaAs(001)to explore the influence of different initial crystallization temperatures on CNRs morphology.Atomic force microscope(AFM)images show that GaAs nanostructures are more likely to form elliptical rings due to diffusion anisotropy.Meanwhile,with the increase of initial crystallization temperature,the inner ring height and density of CNRs are increased,and outer rings are harder to form.In addition,the mechanism of formation of CNRs is discussed by classical nucleation theory and diffusion theory.The method can be used to calculate the diffusion activation energy of gallium atoms(0.7±0.1 eV)on the GaAs(001)surface conveniently.
作者
Yi Wang
Xiang Guo
Jiemin Wei
Chen Yang
Zijiang Luo
Jihong Wang
Zhao Ding
王一;郭祥;魏节敏;杨晨;罗子江;王继红;丁召(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Power Semiconductor Device Reliability Research Center of the Ministry of Education,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics of Guizhou Province,Guiyang 550025,China;School of Information,Guizhou University of Finance and Economics,Guiyang 550025,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61564002 and 11664005)
the Science and Technology Foundation of Guizhou Province,China(Grant No.QKH-[2017]1055)
Guizhou University Talent Foundation(Grant No.GDJHZ-[2015]23)。
