摘要
A new catalytic chemical vapor process for depositing silicon nitride films using silane hydrazine gaseous mixture is described. This system can be useful at a temperature of lower than 400 ℃. The catalytic process gives more rapid deposition rate than 10 nm/min. The atomic composition ratio, N/Si, which is evaluated by Rutherfold backscattering method is about 1.4 under a given experimental conditions more than the stoichiometric value of 1.33 in Si 3N 4. The infrared transmission spectra show a large dip at 850 cm -1 due to Si-N bonds and no clear dip due to Si-O bonds. High N-H bond density is the evidence that the deposition mechanism is limited by N-N bond breaking of the hydrazine. The H contents, evaluated from Si-H and N-H bonds in the infrared absorption spectra, and the deposition rate are measured as a function of the substrate temperature. In addition some film properties such as the resistivity and the breakdown electric field are presented.
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