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激光诱导光栅表面等离子体增强CdSe量子点荧光 被引量:2

Surface plasma enhanced fluorescence of CdSe quantum dots induced by laser on a grating surface
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摘要 利用532nm皮秒脉冲激光在金纳米光栅表面诱导表面等离子体激发Cd Se量子点荧光,并测量了Cd Se量子点荧光增强效应。分别采用AFM刻蚀方法和自组装方法在硅基金膜表面制备了纳米光栅/Cd Se量子点的多层薄膜结构。通过调节皮秒脉冲激光的功率,在显微拉曼平台上测量了Cd Se量子点的荧光光谱。结果表明,金纳米光栅/Cd Se量子点结构能够实现量子点远场荧光大幅增强,其最大荧光强度达7.80倍,并在达到最大强度点开始迅速饱和。该研究结果可广泛应用于光电器件、生物医学检测研究等领域。 The fluorescence enhancement effect of CdSe quantum dots(QDs) was measured by using a picosecond pulsed laser with a 532 nm excitation wavelength to induce surface plasmon(SP) on a gold nanograting surface. A layered thin film was prepared on the gold film surface of silicon fund by atomic force microscope(AFM) etching and self-assembly method, respectively. The fluorescence spectrum of CdSe QDs was measured by adjusting the power of picosecond pulsed laser on a micro-Raman measuring platform. The results showed that the structure of the gold nanograting and CdSe QDs could greatly enhance the far-field fluorescence of CdSe QDs, the maximum fluorescence intensity was up to 7.80 times, and it had been saturated rapidly at the point of reaching the maximum intensity. The results of this study could be widely used in fields of the optoelectronic devices, biomedical detection.
作者 黎显继 白忠臣 彭嫚 商业 秦水介 Li Xianji;Bai Zhongchen;Peng Man;Shang Ye;Qin Shuijie(College of Big Data and Information Engineering, Guizhou University, Guiyang, Guizhou 550025,China;Guizhou Provincial Key Lab for Photoelectron Technology and Application, Guizhou University, Guiyang, Guizhou 550025, China)
出处 《光电工程》 CAS CSCD 北大核心 2019年第5期68-75,共8页 Opto-Electronic Engineering
基金 国家自然科学基金项目(61741505) 贵州省科技支撑项目(QKHZ[2017]2887) 中央引导地方科技发展专项(QKZYD[2017]4004) 贵州省人才团队项目([2018]5616)~~
关键词 表面增强荧光 表面等离子体 金纳米光栅 Cd Se量子点 自组装方法 皮秒激光 surface enhanced fluorescence surface plasmon gold nanograting CdSe QDs self-assembly method picosecend pulsed laser
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  • 1ARDESHIRPOUR Yasaman, DEEN M Jamal, SHIRANI Shahram. Two-dimensional CMOS-based image sensor system for fluorescent detection[J], Can.J.Eleet.Comput.Eng, 2004, 29(4): 231-235.
  • 2YOTTER Rachel A, WILSON D M. A Review of Photodetectors for sensing Light-Emitting Reporters in Biological Systems [J]. IEEE Sensors Journal, 2003, 3(3): 288-303.
  • 3TOKUDA Takashi, YAMAMOTO Akio, KAGAWA Keiichiro. An optical and potential dual-image CMOS sensor for bioscientific applications [J]..SPIE, 2006, 6068(2): 1-7.
  • 4BOLTON Eric K, SAYLER Gary S, NIVENS David E. Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit [J], Sensors and Actuators B, 2002, 85: 179-185.
  • 5YOTTER R A, WARREN M R, WILSON D M. Optimized CMOS photodetector structures for the detection of green luminescent probes in biological applications [J]. Sensors and Actuators B, 2004, 103(1/2): 43-49.
  • 6ALAMO J, SWIRHUN S. Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon [C]//IEEE. Int, Electron Device Meet. Washington, DC: IEEE, 1985: 290-293.
  • 7Ji Soo LEE, Homsey R I, Renshaw D. Analysis of CMOS Photodiodes-Part I: Quantum Efficiency [J]. IEEE Transactions on Electron Devices, 2003, 50(5): 1233-1238.
  • 8GOY J, COURTOIS B, Karam J M, et al. Design of an APS CMOS Image Sensor for low light level applications using standard CMOS technology [J]. Analog Integrated Circuits and Signal Processing, 2001, 29(1/2): 95-104.
  • 9PATOUNAKIS G, SHEPARD K L, LEVICKY R. Active CMOS Array Sensor for Time-Resolved Fluorescence Detection [J]. IEEE Journal of Solid-State Circuits, 2006, 41(11): 2521-2530.
  • 10ELTOUKHY H, SALAMA K, GAMAL A E. A 0.18-μm CMOS Bioluminescence Detection Lab-on-Chip [J]. IEEE Journal of Solid-State Circuits, 2006, 41(3): 651-662.

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