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基于GaN HEMT宽带高效率功率放大器的设计 被引量:2

Design of GaN HEMT Broadband High Efficiency Power Amplifier
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摘要 设计一款工作于0.8GHz^3.0GHz的宽带功率放大器,有源器件采用Cree公司提供的CGH40010FGaN HEMT晶体管.利用ADS软件对功率管的大信号模型进行负载牵引,进而获得可以实现高效率最佳的负载阻抗和源阻抗,通过使用渐变式阻抗匹配的方法有效地拓展了功率放大器的带宽,并且保持了较高的效率.通过仿真最终对加工出来的实物分别进行小信号与大信号测试,实测结果表明,在0.8GHz^3.0GHz的频率范围内,相对带宽达到116%,小信号S21的实测值为14dB^18dB,大信号输出功率为40.15dBm^42.25dBm,漏极效率为50.0%~66.3%,增益为9.15dB^11.25dB,仿真与实测结果基本一致. A broadband power amplifier operating at 0.8 GHz^3 GHz is designed.The active device is CGH40010 F GaN HEMT transistor from Cree.By performing load-pull ADS simulation to the large signal model of the power tube,the optimal load impedance and source impedance can be obtained to realize high efficiency.Employing the tapered impedance matching method,the bandwidth of the power amplifier is effectively expanded with higher efficiency.Simulation design of the circuit schematic is processed.And the small signal and the large signal are tested respectively.The measurements show that the small signal S21 is in the range of 14 dB^18 dB with the test frequency range of 0.8 GHz^3 GHz and the relative bandwidth of 116%.The large signal output power is40.15 dBm^42.25 dBm,with drain efficiency 50.0%~66.3% and gain 9.15 dB^11.25 dB.The simulation results are basically consistent with the measurements.
出处 《杭州电子科技大学学报(自然科学版)》 2017年第6期1-4,共4页 Journal of Hangzhou Dianzi University:Natural Sciences
基金 浙江省公益技术研究资助项目(2016C31070)
关键词 宽带 功率放大器 高效率 GAN HEMT晶体管 broadband power amplifier high efficiency GaN HEMT transistor
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