摘要
以 HF- HNO3 微波消解试样 ,直接用 ICP- MS测定高纯钽铌化合物中 19个杂质元素 ,选择了仪器的工作参数 ,考查了质谱干扰及基体干扰的情况 ,选择内标元素 Ga、In校正 ,克服了基体效应。检出限为0 .0 0 5— 0 .2μg/ g,回收率为 87%— 110 % ,方法快速准确 ,灵敏度高。
The 19 elements as trace impurities in high-purity niobium and tantalum samples were dissolved by microwave instrument and determined by inductively coupled plasma mass spectrometry.Instrumental parameters were selected,mass and matrix interferences were determined,and calibrated by internal standard Ga In.The method shows a recovery rate of the methed was between 87%-110% and determination limit of 0.005μg/g-0.2μg/g with good accuracy and high sensitivity.
出处
《光谱实验室》
CAS
CSCD
2004年第3期551-555,共5页
Chinese Journal of Spectroscopy Laboratory
