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磁场增强Nb∶SrTiO_3/ZnO异质结的整流特性

Rectifying Characteristic of Nb∶SrTiO_3/ZnO Heterojunctions Improved by Magnetic Field
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摘要 采用磁控溅射法外延生长(100)Nb∶SrTiO_3/(110)ZnO异质结。施加磁场前、后均观测到典型的整流特性,但施加磁场后的整流效应显著增强。通过高频和低频时的电容,得到施加磁场导致界面态密度从3.8×10^(12)eV^(-1) cm^(-2)增加到8.2×10^(12)eV^(-1)cm^(-2)。此外,在-1~1T范围内Nb∶SrTiO_3/ZnO异质结呈现出了抗磁背景下的强铁磁特性。因此磁场致整流效应增强可归结为界面态密度的增加。 The(100)Nb∶SrTiO3/(110)ZnO heterojunction were epitaxially grown by magnetron sputtering.The typical rectification characteristic was observed before and after applying a magnetic field,but the rectifying effect was significantly enhanced after applying a magnetic field.From high and low frequency capacitance,the interface state density is increased from 3.8×10^12eV^-1cm^-2 to 8.2×10^12eV^-1cm^-2 after applying a magnetic field.Furthermore,the Nb∶SrTiO3/ZnO heterojunction shows strong ferromagnetic properties at the range of -1~1T under the diamagnetic condition.Thus the magnetic field enhanced rectifying effect can come down to the increase of interface state density.
出处 《压电与声光》 CAS CSCD 北大核心 2017年第2期224-227,共4页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(510202057) 河南省高等学校重点科研基金资助项目(17A140004)
关键词 Nb∶SrTiO3/ZnO 异质结 整流比 磁场 界面态密度 Nb∶SrTiO3/ZnO heterojunctions rectification magnetic field interface state density
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