摘要
采用直流反应磁控溅射法在玻璃衬底上制备了Sn掺杂ZnO透明导电薄膜,用Hall效应测试仪表征了薄膜的电学性能,研究了不同生长条件对薄膜电学性能的影响。研究结果表明,随着Ar/O2比的增加,电阻率先减小后增大,在Ar/O2为6时,取得最低的电阻率为2.02×10-2Ω·cm;随着溅射功率的增大,薄膜电阻率急剧减小,在140 W时获得最低电阻率为2.89×10-2Ω·cm;在溅射时间11min时得到了最低的薄膜电阻率,为1.45×10-2Ω·cm。随着压强的增大,电阻率先急剧减小,后缓慢增大,当溅射压强为0.8Pa时,薄膜电阻率具有最小值,为2.17×10-2Ω·cm。当衬底温度在400~500℃范围内变化时,在475℃时取得最佳电学性能,电阻率为2.26×10-2Ω·cm。在整个实验条件下,当Ar/O2为8、溅射功率为180W、衬底温度为450℃、溅射压强为0.5Pa、溅射时间为11min时,薄膜具有最佳的导电性能,电阻率为1.45×10-2Ω·cm。
Sn doped ZnO transparent conductive thin films were prepared on glass substrates by direct reactive magnetron sputtering.The electrical properties of thin films were characterized by Hall effect measurement.The effect of different conditions on the electrical properties of thin films was studied.The resistivity decreases and then increases as the Ar/O2 increases.When the Ar/O2 is 6,the film has the lowest resistivity of 2.02×10-2Ω·cm.The resistivity dramatically decreases with the increase of sputtering power,which is the lowest,2.89×10-2Ω·cm at 140 W.The lowest resistivity of thin films is 1.45×10-2Ω·cm when the sputtering time is 11 min.The resistivity of thin films first dramatically decreases and then increases as the sputtering pressure increases.When the sputtering pressure is 0.8Pa,the lowest resistivity of thin films is 2.17×10-2Ω·cm.When the substrate temperature is 475℃,the thin films exhibits the best electrical properties,with the lowestresistivity of 2.26×10-2Ω·cm.During the whole experiments,the thin film has the best conductivity and the resistivity is 1.45×10-2Ω·cm,when the ratio of Ar/O2 is 8,the sputtering power is 180 W,the substrate temperature is 450 ℃,the sputtering pressure is0.5Pa,and the sputtering time is 11 min.
出处
《长沙理工大学学报（自然科学版）》
CAS
2016年第1期81-86,共6页
Journal of Changsha University of Science and Technology:Natural Science
基金
国家自然科学基金资助项目(51302021)
湖南省教育厅科研基金项目(13C1025)
关键词
ZNO
Sn掺杂
透明导电薄膜
电学性能
磁控溅射
ZnO
Sn doping
transparent conductive thin films
electrical property
magnetron sputtering
