摘要
为了获得具有较好紫外光发射特性的ZnO纳米线,以p-GaN薄膜为衬底,采用水热法在较低的温度（105℃）下制备出了ZnO纳米线阵列,其中纳米线的直径在100～300nm之间。对p-GaN薄膜进行3种不同的预处理,结果表明,将衬底放入氨水中浸泡有利于生长出致密、均匀、定向排列的ZnO纳米线阵列,这与p-GaN薄膜衬底经氨水浸泡后衬底表面的OH-浓度有关,表明纳米线的密度和尺寸与p-GaN薄膜衬底表面的预处理密切相关。另外,该ZnO纳米线阵列具有较好的紫外发射特性,有望在紫外发光二极管领域获得应用。
To obtain ZnO nanowire array with good UV emission characteristics, it has been synthesized on p-GaN film substrate prepared by an aqueous solution route at low temperature （ 105 ℃ ） , in which the diameter of the nanowires are between 100 - 300 nm. p-GaN substrate has been pretreated by three different methods respectively, the results show that the substrate which has been included in the ammonia immersion was advantageous to the growth of compact, uniform, directional ZnO nanowire array, which is closely related to OH-concentration on the surface of the p-GaN film substrate when soaking with ammonia. It indicates that the density and size of the grown nanowires depend significantly on the pretreatment of p- GaN. In addition, the ZnO nanowire array has good ultraviolet emission characteristic, which is expected to find application in the field of ultraviolet light-emitting diodes.
出处
《江汉大学学报（自然科学版）》
2015年第6期525-529,共5页
Journal of Jianghan University：Natural Science Edition
基金
国家自然科学基金资助项目(61405076
11304124)
