摘要
从封装材料和电池片两方面对引发晶体硅光伏组件的电位诱发衰减现象的主要因素进行研究,通过实验分析得出引起该现象的关键因素和产生机理。通过优化电池片工艺及优化封装材料两种措施来消除该因素的影响,最终通过改变封装材料和优化电池片表面钝化层的方式分别制备两类具有抗电位诱发衰减性能的晶体硅光伏组件,其在-1000 V、85℃、85%相对湿度条件下大于1000 h的测试后,两类组件功率衰减都小于3%,组件的电位诱发衰减现象得以消除,光伏组件的抗电位诱发衰减性能大幅提升。
Aiming on increasing the resistance of potential induced degradation properties for solar panels once exposed to external potentials in the field. This paper is focusing on P type silicon photovohaic module, a test setup is presented for simulation of the potential induced degradation in the lab and the influence of different types of packaging materials and cell properties on potential induced degradation is demonstrated in order to reveal the key factor causing this phenomenon and the measures how to eliminate this factor. Finally, we made the anti-potential induced degradation modules by optimizing the solar cells and matching packaging relative humidity and more than 1000 hours tests, the power d materials, respectively, which in -1000 V, 85 ℃, 85% egradation of this two types of modules are less than 3%, the phenomenon of potential induced degradation did not occur, both improved measures can eliminate the key factor that causing this phenomenon and significantly increase the module＇ s anti- potential induced degradation performance.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2015年第11期2698-2702,共5页
Acta Energiae Solaris Sinica
关键词
晶体硅光伏组件
电位诱发衰减
机理
抗PID光伏组件
crystalline silicon photovohaic module
potential induced degradation
mechanism
anti-PID PV module
