摘要
本文采用计算机FORTRAN语言自主编程,通过建立通电线圈磁场的数学模型,对磁控溅射靶附近由通电线圈产生的磁场分布进行了二维数值模拟计算。计算表明当内、外线圈加反向电流,增加内或外线圈电流,可使通电线圈产生的磁场非平衡度增加,其增加强度由电流增加强度所决定。随着内或外线圈电流增加,真空腔内磁场强度分布更均匀。通过调节内、外电线圈电流,控制磁场分布,从而控制其对等离子体密度及能量分布,可使等离子体因磁场的均匀分布而在真空腔内分布均匀化。另外,这种外加的电磁场还会使磁控装置本体磁场增强,因此对磁控溅射产生的等离子体有增强作用。此结果为磁控溅射装置上磁场配置提供重要参考依据。
FORTRAN computer programming language is used to establish the mathematical models in this work. The two-dimensional simulation of the distribution of the magnetic field produced by hot-wire coil, locating under the target, was carried out. The result shows that the magnetic field unbalance degrees increase with increasing of the currents in the inner or outer coils when the reverse currents are applied on. The increments of the unbalance degrees are determined by the increments of the currents. With the increases of the inner or outer coil currents, the distributions of the magnetic field in the vacuum chamber get more homogeneous, as well as the distributions of the plasma homogeneous . Additionally, the electromagnetic field also strengthens the permanent magnetic field, which confines and extends the pathways of the electrons and increases the ionization ratios of the plasma. The result provides an important reference for the magnetic field configuration of the magnetron sputtering device.
出处
《真空》
CAS
2015年第6期14-18,共5页
Vacuum
关键词
磁场分布
磁控溅射
数值模拟
magnetic field distribution
magnetron sputtering
numerical simulation
