摘要
根据自主研制的用于制备SiC一维纳米材料的可控气氛炉内的空间尺寸以及通气方式,设计了4种不同结构的化学气相沉积(CVD)反应室("S"型结构,"三角"型结构,"双三角"型结构,"回"型结构),并基于CFD原理,使用Fluent软件对这4种反应室内的温度场及气流场进行了模拟,得到了各反应室内温度及气体流速的分布云图。通过比较分析发现,在达到稳态后,4种结构反应室内气孔附近的温度均比较低;但气流场模拟结果显示,"回"型结构CVD反应室内,在产物生长的基片表面附近存在气体流量最多且层流面积最大,适于SiC纳米线生长的面积最大,最适用于SiC一维纳米材料的连续制备,其结果已被实验验证。
In this paper,according to the space size and ventilation of self-designed controlled atmosphere furnace for continuous preparing SiC nanowires（SiC NWs）,CVD reaction chamber of four different structure（＂S＂structure, ＂triangle＂structure,＂double triangle＂structure,＂回＂structure）was designed,and the temperature and gas flow field of the four reactors was simulated based on CFD principle by using Fluent software,the distribution cloud pictures of temperature and gas flow rate in every reaction chamber were obtained.By comparison we found that the temperature was lower near the hole in the four reaction chamber after reaching the steady state,but the gas flow field simulation results show that the CVD reaction chamber of＂回＂structure was the best suited for continuous preparation of SiC NWs,because the gas flow was the most and the laminar flow area was the largest near the substrate surface,the area of suitable for SiC NWs growth was the largest.These results have been confirmed by experiments.
出处
《青岛科技大学学报（自然科学版）》
CAS
2015年第5期524-529,共6页
Journal of Qingdao University of Science and Technology:Natural Science Edition
基金
国家自然科学基金项目(51272117
51172115)
山东省科技发展计划项目(2012GGX10218)
