期刊文献+

First-principles Study of Divalent ⅡA and Transition ⅡB Metals Doping into Cu_2O 被引量:1

First-principles Study of Divalent ⅡA and Transition ⅡB Metals Doping into Cu_2O
在线阅读 下载PDF
导出
摘要 Divalent IIA metals such as Be, Mg, Ca, Sr, Ba and transition IIB metals such as Zn, Cd were investigated as possible n-type dopants into the Cu2 O theoretically by using the first-principles calculations based on density functional theory. By systematical analyses of the lattice parameters, the bond length, the electronic structure, the local density of states and the defect formation energy for various doping systems, it is revealed that Ca, Sr, Ba and Be are more suited for n-type doping into Cu2O as shallow donors, compared to Mg which introduces a relatively deep donor level in Cu2O. Meanwhile, Zn and Cd can hardly be doped into Cu2O due to the positive formation energy of relevant defects. Divalent IIA metals such as Be, Mg, Ca, Sr, Ba and transition IIB metals such as Zn, Cd were investigated as possible n-type dopants into the Cu2 O theoretically by using the first-principles calculations based on density functional theory. By systematical analyses of the lattice parameters, the bond length, the electronic structure, the local density of states and the defect formation energy for various doping systems, it is revealed that Ca, Sr, Ba and Be are more suited for n-type doping into Cu2O as shallow donors, compared to Mg which introduces a relatively deep donor level in Cu2O. Meanwhile, Zn and Cd can hardly be doped into Cu2O due to the positive formation energy of relevant defects.
出处 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2015年第3期458-462,共5页 武汉理工大学学报(材料科学英文版)
基金 Funded by the National Natural Science Foundation of China(Nos.50972041,61274010) Program for New Century Excellent Talents in University,Ministry of Education of China(No.NCET-09-0135) Research Fund for the Doctoral Program of Higher Education of China(Nos.20124208110005,20124208120006) the Natural Science Foundation of Hubei Province(No.2011CDA81) Science Foundation of Hubei Provincial Department of Education(No.D20131001)
关键词 CU2O n-type doping divalent metals electronic structure defect formation Cu2O n-type doping divalent metals electronic structure defect formation
  • 相关文献

参考文献36

  • 1Grondahl L O, Geiger P H. A New Electronic Rectifier[J]. Proc. AIEE Wnter Convention, 1927, 46:357-366.
  • 2Kermard E H, Dieterich E O. An Effect of Light upon the Contact Potential of Selenium and Cuprous Oxide[J]. Phys. Rev., 1917, 9: 58- 63.
  • 3Izaki M, Shinagawa T, Mizuno K I", et al. Electrochemically Construct- ed p-Cu20/n-ZnO Heterojunction Diode for Photovoltaic Device[J]. 3. Phys. D: Appl. Phys., 2007, 40:3 326-3 329.
  • 4Cui J, Gibson U J. A Simple Two-Step Electrodeposition of CthO/ZnO Nanopillar Solar Cells[J]. 3. Phys. Chem. C, 2010, 114:6 408-6 412.
  • 5Meyer B K, Polity A, Reppin D, et al. Binary Copper Oxide Semiconductors: From Materials Towards Devices[J]. Phys. Status SolidiB, 2012, 249:1 487-1 509.
  • 6Chu H P, Lei L, Hu X, et al. Metallo-Organic Chemical Vapor Deposi- tion (MOCVD) for the Development of Heterogeneous Catalysts[J]. Energy Fuels, 1998, 12: I 10g-I 103.
  • 7Okqunara M, Nakamura S, Tsubota S, et al. Chemical Vapor Deposition of Gold on A1203, SiO2 and TiO2 for the Oxidation of CO and of H2[J]. Catal. Left., 1998, 51:53-58.
  • 8Gou L, Murphy C. Solution-Phase Synthesis of CuzO Nanocubes[J]. Nano Lett., 2003, 3:231-234.
  • 9Akimoto K, Ishizuka S, Yanagita M. Thin Film Deposition of Cu20 and Application for Solar Cells[J]. Solar Energy, 2006, 80:715-722.
  • 10Yang W Y, Kim W G, Rhee S W. Radio Frequency Sputter Deposition of Single Phase Cuprous Oxide Using CuO as a Target Material and Its Resistive Switching Properties[J]. Thin Solid Films, 2008, 517: 967- 971.

同被引文献5

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部