摘要
基于绝缘栅双极型晶体管(IGBT)栅极疲劳机理,提出采用阈值电压对IGBT健康状态进行监控的可靠性评估方法。该方法通过研究阈值电压随疲劳程度的变化规律。建立了IGBT阈值电压可靠性评估模型。仿真和实验验证了该模型的正确性与准确性。通过该模型可以对IGBT的健康状况进行准确评估。
Based on the gate fatigue mechanism of insulated gate bipolar transistor（IGBT）, it is put forward that the reliability evaluation method of threshold voltage against health monitoring.h is investigated that the law of fatigue and threshold voltage,then the reliability model of threshold voltage is established.The simulation and experimental results verify the rightness and accuracy of the model.It is significant for the accurate evaluation of IGBT health.
出处
《电力电子技术》
CSCD
北大核心
2015年第4期36-38,60,共4页
Power Electronics
基金
国家自然科学基金(51277178)
国家重点基础研究发展计划973项目(2013CB035601)~~
关键词
绝缘栅双极型晶体管
疲劳机理
可靠性
insulated gate bipolar transistor
fatigue mechanism
reliability
