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Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm

Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm
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摘要 The self-stimulated Raman laser operation of a Nd:Lu0.99La0.01VO4 new crystal is presented. A 0.3at.% Nd doped Lu0.99La0.01VO4 crystal in dimensions 3 × 3 × 20 mm^3 is adopted as the self-stimulated Raman crystal. At a pulse repetition frequency of 14kHz, average output powers of 24OmW for the first Stokes light at 1181 nm and 660mW for the fundamental light at 1068nm are obtained under an incident pump power of 5.5 W. The pulse widths of the first Stokes light and fundamental light are about 15 and 25us. The slope effieiencies are about 12. 7% and 18.8% with respect to the incident pump power. The self-stimulated Raman laser operation of a Nd:Lu0.99La0.01VO4 new crystal is presented. A 0.3at.% Nd doped Lu0.99La0.01VO4 crystal in dimensions 3 × 3 × 20 mm^3 is adopted as the self-stimulated Raman crystal. At a pulse repetition frequency of 14kHz, average output powers of 24OmW for the first Stokes light at 1181 nm and 660mW for the fundamental light at 1068nm are obtained under an incident pump power of 5.5 W. The pulse widths of the first Stokes light and fundamental light are about 15 and 25us. The slope effieiencies are about 12. 7% and 18.8% with respect to the incident pump power.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第3期60-62,共3页 中国物理快报(英文版)
基金 Supported by the Natural Science Foundation of Zhejiang Province under Grant No LQ13F050004 the Research Funds of College Student Innovation of Zhejiang Province under Grant No 2014R424021 Laboratory Open Project of Wenzhou University under Grant No 14SK25A the National Natural Science Foundation of China under Grant No 10904143
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参考文献17

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