摘要
关于高功率微波(HPM)对半导体器件影响的研究往往采用二维仿真模型,而器件宽度作为第三个维度,对仿真结果的影响并没有得以足够的重视。通过Sentaurus TCAD软件对器件的三维模型进行模拟仿真,重点研究了器件宽度在高功率微波注入条件下对于器件电击穿和热积累的影响。研究结果表明,随着器件宽度的增加,标志着二次击穿开始发生的"快回"电压Vt1会明显降低,因此在HPM注入下,较大宽度的器件将有更多的时间处于击穿区域;同时,高功率微波引起热集聚效应在大沟道宽度器件中将更加显著,其内部的峰值温度大于沟道宽度较小的器件。提出了一种新型的轻掺杂漏极结构,能够改善器件内部沿宽度方向上的热扩散条件,减小器件内部的峰值温度,并可提高器件的Vt1,进而提高器件在HPM下的稳定性。
Two-dimensional simulation models were widely used in previous studies on high power microwave（HPM）effect on semiconductor device.The channel width,as the third dimension,has not yet been considered seriously.This article mainly focuses on the width effect on the electrical and thermal breakdown of MOSFET.Simulations of MOSFET with its drain injected by HPM are performed through the Sentaurus TCAD software.It shows that the ＂snapback＂ voltage decreases obviously with the increase of the channel width,thus the device with larger width will sustain the second breakdown for longer time in a condition of HPM injection.Besides,with the power injected from the drain,the smaller channel width of MOSFET is,the lower its peak temperature is.In addition,according to the principle of heat accumulation in the semiconductor device,a new kind of lightly doped drain（LDD）structure is proposed in this paper,which can improve the＂snapback＂voltage and the thermal diffusion along the width direction,resulting in enhancement of the device reliability.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第5期420-425,共6页
Research & Progress of SSE
基金
中央高校基本科研业务费专项资金资助项目(YWF12LZGF055)
北京市自然科学基金资助项目(4122045)
关键词
高功率微波
沟道宽度
快回电压
热积累
轻掺杂漏极
high power microwave（HPM）
channel width
snapback voltage
heat accumulation
lightly doped drain（LDD）
