摘要
针对532nm纳秒单脉冲激光辐照单晶硅、砷化镓（GaAs）太阳能电池的损伤效应，结合电池的结构和等效电路，分析了纳秒单脉冲激光对两种太阳能电池的损伤机理。结果表明，激光辐照区域的太阳能电池组成成份改变，PN结内部缺陷增多，载流子复合几率增大，导致太阳能电池输出性能下降，单晶硅材料的电池输出性能下降并不明显，而GaAs材料的电池由于砷等元素的升华，镓等金属元素的熔融再凝固过程，形成一个连接电池正负极的导电通路，导致GaAs电池不能正常工作。
This paper aims at the damage effect of monocrystalline silicon and GaAs solar cells by single nanosecond laser pulse at 532 nm. Considering the structrues and equivalent circuits of solar cells, the damage mechanism by nanosecond single pulse laser is analysed. The results show that the components of illuminated zone are changed and the defects insides PN junction and the recombination probability of carriers increases. As a result, the output porperty of solar cells decreases. The output porperty of monocrtstalline silicon material doesn＇t decrease obviously. However, because of subliming of As et al. and melting and freezing of Ga et al., an access to connecting cells＇ positive and negative pole are formed in GaAs solar cells, makin~ GaAs solar cells can＇t work nomally.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2014年第13期354-359,共6页
Acta Optica Sinica
关键词
太阳能电池
脉冲激光
损伤
单晶硅
砷化镓
solar cells
pulse laser
damage
monocrystalline silicon
GaAs
