摘要
分析了准静态法的局限性,描述了杂质分布确定、高频C—V测量与数值计算三结合的测定方法.讨论了泊松方程的数值解,推导了非均匀结点下的迭代公式,给出了边界条件的恰当形式.
The limitations of the quasi-static method is analyzed in this paper. An accurate evaluation method which combines the determination of impurity distribution, the measurement of high frequency C-V and the numerical evaluation together, is presented. A numerical solution to poisson's equation for MIS structure is discussed in detail. An iterative formula for a nonuniform mesh is derived and suitable boundary conditions are also given.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
1991年第4期479-484,共6页
Journal of Sichuan University(Natural Science Edition)
关键词
MIS结构
表面势
栅压
半导体
MIS structure, impurity distribution, high-frequency C-V measurement, quasi-static method.
