摘要
为分析输出频率对结温波动的影响,开发了基于模型降阶方法的程序,运用该程序对IGBT元件的热模型进行了计算,将得到的温度计算结果与ANSYS稳态计算结果进行比较,结果的一致性证明该方法是有效的。在此基础上,利用该程序计算得到了不同输出频率下IGBT元件的结温波动曲线。通过瞬态温度与基于平均损耗计算的稳定温度对比可知：1 Hz输出频率时半正弦波损耗产生的温度波动范围为-7.2%～7.6%,方波损耗产生的温度波动范围为-3.9%～6.5%,输出频率对温度波动的影响显著；50 Hz输出频率时对温度波动的影响较小,可以忽略；半正弦波损耗产生的温度波动大于方波损耗。分析结果可为IGBT元件瞬态温度计算提供参考,基于模型降阶的程序可以进一步运用于其他电力电子器件瞬态温度的计算。
In order to analyze the effects of output frequency on the fluctuation of junction temperature,the program based on the model order reduction method was developed,the temperature results was obtained and compared with steady state calculation results by ANSYS software,the consistency of results shows that the method is effective. The temperature change curves of IGBT module in different output frequencies were obtained by the program.According to the comparison between the stable temperature based on the average losses and the transient temperature,the results show that the range of temperature fluctuations produced by half sine wave losses in 1 Hz output frequency is-7.2%～7.6%,and the range of temperature fluctuations produced by square wave losses is -3.9%～6.5%,the effects on the temperature of IGBT module in 1 Hz output frequency is significant and less impact for the temperature of IGBT module while the output frequency is 50 Hz. The temperature fluctuation caused by half sine wave losses is greater than square wave losses. The analysis results can provide reference for IGBT transient temperature calculation,the program based on model order reduction can be further used in other power electronics devices transient temperature calculation.
出处
《电气传动》
北大核心
2014年第6期76-80,共5页
Electric Drive
基金
湖南省自然科学省市联合基金重点项目资助(12JJ8020)
关键词
绝缘栅双极晶体管
输出频率
结温波动
模型降阶
insulated gate bipolar transistor（IGBT）
output frequency
junction temperature ripple
model order reduction
