摘要
Herein we develop an Al/AlOx/Al trilayer process, feasible to fabricate complex circuits with wiring crossovers, for the preparation of A1 junctions and phase qubits. The AlOx layer is obtained by in situ thermal oxidation, which provides high-quality junction tunnel barriers. The A1 junctions show a considerably low leakage current and the Josephson critical current density can be conveniently controlled in the range of a few to above 100 A/cm2, which is favorable in the phase qubit application. Macroscopic quantum tunneling, energy spectrum, energy relaxation time, Rabi oscillation, and Ramsey interference of the A1 phase qubits are measured, demonstrating clearly quantum coherent dynamics with a timescale of 10 ns. Further improvements of the coherent dynamic properties of the device are discussed.
Herein we develop an Al/AlOx/Al trilayer process,feasible to fabricate complex circuits with wiring crossovers,for the preparation of Al junctions and phase qubits.The AlOx layer is obtained by in situ thermal oxidation,which provides high-quality junction tunnel barriers.The Al junctions show a considerably low leakage current and the Josephson critical current density can be conveniently controlled in the range of a few to above 100 A/cm2,which is favorable in the phase qubit application.Macroscopic quantum tunneling,energy spectrum,energy relaxation time,Rabi oscillation,and Ramsey interference of the Al phase qubits are measured,demonstrating clearly quantum coherent dynamics with a timescale of 10 ns.Further improvements of the coherent dynamic properties of the device are discussed.
基金
supported by the National Natural Science Foundation of China(Grant Nos.11104340 and 11104332)
the Ministry of Science and Technology of China(Grant Nos.2009CB929102 and 2011CBA00106)
