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A model for nanogrinding based on direct evidence of ground chips of silicon wafers 被引量:6

A model for nanogrinding based on direct evidence of ground chips of silicon wafers
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摘要 Nanometer chips were directly fabricated using face nanogrinding carried out by ultrafine diamond grits at room temperature. Direct evidence for ground nanometer chips is cuboid, and the average ratio of width to thickness is 1.49. Chips of 9.0 nm in thickness, 13.3 nm in width, and 16.0 in diagonal were achieved and confirmed using transmission electron microscopy. Based on the nanometer chips observed, a model was proposed according to the mass conservation and fundamental mechanism of face grinding. The surface roughness and thickness of damaged layers measured experimentally are in good agreement with the prediction of the developed model. The feed rate significantly affects the surface roughness and thickness of damaged layers, when keeping the wheel and table speeds constant, respectively.
出处 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第9期2099-2108,共10页 中国科学(技术科学英文版)
基金 supported by the National Natural Science Foundation of China (Grant No. 91123013) Tribology Science Fund of State Key Laboratory of Tribology (Grant No. SKLTKF12A08) (Tsinghua University) Fund of State Key Laboratory of Metastable Materials Science and Technology (Grant No. 201302) (Yanshan University) the Fundamental Research Funds for the Central Universities (Grant No. DUT13YQ109)
关键词 nanometer chip nanogrinding surface roughness si wafer TEM 纳米芯片 模型 证据 地面 透射电子显微镜 表面粗糙度 硅片 超细金刚石
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