摘要
针对低压差线性稳压器,采用接触式脉冲电流注入试验方法,研究电磁脉冲对集成半导体器件的损伤机理,并对试验数据进行统计分析。结果显示,该器件的电磁脉冲损伤阈值规律可以用Weibull分布函数较好地进行表征。
With LDO regulator as an example,mechanism of semiconductor device damage by electromagnetic pulse（EMP） interference was investigated using pulse current injection（PCI） technique.Test data were processed and analyzed statistically.It has been shown that the regular pattern of EMP damage threshold of semiconductor device could be well characterized by Weibull distribution function.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第3期423-425,共3页
Microelectronics
基金
国家自然科学基金资助项目(51107102)
