摘要
采用直流磁控溅射技术在玻璃衬底上制备了掺锡氧化铟(ITO)透明导电薄膜,通过XRD、XPS、四探针仪和分光光度计等测试方法,研究了沉积速率对ITO薄膜微观结构和光电性能的影响。实验结果表明:ITO样品为具有(222)择优取向的立方锰铁矿结构,其晶体结构和光电性能明显受到沉积速率的影响。当沉积速率为4 nm/min时,所制备的ITO薄膜具有最大的晶粒尺寸(32.5 nm)、最低的电阻率(1.1×10-3Ω.cm)、最高的可见光区平均透过率(86.4%)和最大的优良指数(7.9×102S.cm-1),其光电综合性能最佳。同时采用Tauc法则计算了ITO薄膜的光学能隙,结果显示沉积速率增大时,ITO薄膜的光学能隙单调减小。
Tin-doped indium oxide （ITO） thin films were prepared on the glass substrates by DC magnetron sputtering technique using a sintered ceramic target, followed by in-situ annealing. The thin films were characterized by X-ray diffraction （ XRD）, X-ray photoelectron spectroscopy （XPS）, four- point probe and spectrophotometer, respectively. The effect of the deposition rate on the microstructural, optical and electrical properties of the films was investigated. Experimental results show that the ITO ftlms are polycrystalline in nature having a cubic bixbyite type crystal structure with a preferred grain orientation in the （222） direction. The deposition rate significantly affects the crystal structure and optoelectrical properties of the films. The ITO samples fabricated at the deposition rate of 4 nm/min exhibit the highest figure of merit （7.9×10^2 S . cm-1 ）, which have the maximum grain size （32.5 nm）, the lowest resistivity （1.1×10^-2Ω·cm）, the highest average visible transmittance （86.4%）. Furthermore, the energy gap of the thin films was calculated by the Tauc＇s law. A red shift of the opticalenergy gap is observed with an increase in the deposition rate. It suggests that the deposition rate is a very important factor in controlling the electrical and optical properties of ITO thin films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第4期647-652,670,共7页
Journal of Synthetic Crystals
基金
湖北省自然科学基金资助项目(2011CDB418)
中南民族大学学术团队基金资助项目(XTZ09003)
关键词
透明导电薄膜
掺锡氧化铟
晶体结构
光电学性能
transparent conducting film
tin-doped indium oxide
crystal structure
optoelectricalproperties ＂
