摘要
介绍了采用镓铝双质掺杂制造快速晶闸管的设计要点和关键工艺。根据器件的特性要求,优化设计了基区结构参数和门极-阴极图形,采用了高级交叉指状辅助门极结构,合理确定了短路发射极的尺寸及分布形式。采用固态源闭管式扩散工艺,镓铝双质掺杂一次连续完成,扩散参数具有良好的均匀性和重复性,获得了较理想的杂质浓度分布,并采用12 MeV电子辐照技术控制少子寿命。研究了镓铝双质掺杂对快速晶闸管参数的影响,分析和讨论了器件特性得到改善的原理。研究结果表明,采用该掺杂技术制造的快速晶闸管,电气参数的一致性明显提高,综合性能明显改善,具有良好的阻断特性、门极特性和动态特性。
The design point and key process for fabricating fast switching thyristor were introduced by using Ga-Al double-impurity dope. According to the specific requirements of the device, the structure parameters of base region and gate-cathode graphics were designed optimally. The senior cross finger auxiliary gate structure was applied. The size and distribution type of the short-circuit emitter were also defined. By using solid source closed-tube diffusion process, Ga-Al double-impurity dope was once finished continuously in the same diffusion furnace and at the same diffusion temperature. The diffusion parameters have the perfect homogeneity and repeatability, and an ideal distribution of impurity concentration was achieved. 12 MeV electron irradiation was applied in order to control minority carrier lifetime. The influence of Ga-A1 double-impurity dope on the fast switching thyristor parameters was investigated. The improvement mechanism of device properties was analyzed and discussed. The results show that the uniformity of electrical parameter and comprehensive properties of the fast switching thyristor are improved obviously by using this technique. The perfect blocking, gate electrode and dynamic characteristics are obtained.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第1期30-34,共5页
Semiconductor Technology
关键词
快速晶闸管
镓铝双质掺杂
杂质浓度分布
图形设计
电子辐照
fast switching thyristor
Ga-Al double-impurity doping
distribution of impurity concentration
graphic design
electron irradiation
