摘要
利用离子辅助电子束蒸发技术在不同沉积工艺参数下制备了ITO薄膜,详细讨论了沉积工艺参数的变化对ITO薄膜表面形貌及晶体结构的影响。结果表明:随基板温度的升高,ITO薄膜的缺陷增多,表面粗糙度增大。高温下沉积的薄膜为多晶结构,并呈现[111]择优取向;随着沉积速率的升高,薄膜表面粗糙度变大,结晶度升高,晶粒尺寸增大,呈现出沿[001]取向择优生长的趋势,并且低速率下沉积的薄膜中包含除立方氧化铟外的其他晶相。
ITO thin films were deposited by ion-assistant electron beam evaporation,and the effect of deposition parameters on morphology and crystalline structure were discussed elaborately.The results indicated that the amounts of defects and surface roughness were increase with the increase of substrate temperature.ITO film deposited at high substrate temperature was polycrystalline which presented preferential orientation in direction.Surface roughness,crystalline and grain size were increase with the increase of deposition rate of ITO films which manifested the crystalline trend in direction.And there was another crystalline phase in the ITO film deposited at low deposition rate besides BCC In2O3.
出处
《武汉理工大学学报》
CAS
CSCD
北大核心
2012年第10期5-8,共4页
Journal of Wuhan University of Technology
基金
国家自然科学基金面上项目(51172221)
关键词
ITO薄膜
表面形貌
晶体结构
基板温度
沉积速率
ITO thin film
morphology
crystalline structure
substrate temperature
deposition rate
