摘要
通过微波等离子体化学气相沉积技术(MWPCVD),以富勒烯(C60)甲苯饱和溶液为碳源,用载气携带的方式通入反应腔中生长金刚石膜。Raman光谱、SEM和AFM表征结果表明得到的超纳米晶金刚石薄膜相组成纯度较高,其平均晶粒尺寸约为15 nm,表面粗糙度为16.56 nm,薄膜平均生长速率约为0.6μm/h。此方法较其他以C60为碳源生长超纳米晶金刚石薄膜的方法更为简便,且容易控制富勒烯碳源的浓度,沉积速率更高,是一种新型的制备超纳米晶金刚石薄膜的可控工艺方法。
Through microwave plasma chemical vapor deposition technology （MWPCVD）, uhra-nanocrystalline diamond （UNCD） thin films are successfully deposited using fullerene saturated solution in toluene as carbon source, which are loaded into the reactive cavity by hydrogen gas. With the characterization of Raman spectrum, scanning electron microscopy （SEM） and atomic force microscopy （AFM） images, as-deposited UNCD thin film with the average crystalline dimension of 15 nm and surface roughness of 16. 56 nm has high purity of phase composition. Comparing with other methods for UNCD thin films using C60 as carbon source, this way with higher controllability in C60 concentrations and quicker rate of deposition is simpler ,which is a new technological process for preparing UNCD thin film.
出处
《现代化工》
CAS
CSCD
北大核心
2012年第5期75-78,共4页
Modern Chemical Industry
