摘要
通过引入CuCl-Si混合粉末和水蒸气作为氧化硅的原料,应用常压化学气相沉积方法,从廉价的氯化铋和硫粉出发,在450℃下精确控制合成了不同形态的氧化硅包敷的硫化铋纳米线,包括具有光滑表面的纳米线和缀有硫化铋纳米珠的纳米线。利用高分辨透射电镜对产物进行了精细的表征,讨论了精确控制合成的机制。
By introduction of a CuC1-Si mixture and water vapor into the system as the silica source, silica sheathed Bi2S3 nanowires with smooth surfaces or decorated with nanobeads were all successfully synthesized with precise control at 450℃using the cheap BiC13 and sulfur powder as the reactants with the atmospheric pressure chemical vapor deposition （APCVD） method. High resolution transmission electron microscope （HRTEM） was used to investigate the details of the products. The mechanism for the precise control to the synthesis process was discussed.
出处
《北京大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2012年第2期217-222,共6页
Acta Scientiarum Naturalium Universitatis Pekinensis
基金
中央高校基本科研业务费专项资金(10QL29)资助
关键词
硫化铋
纳米线
鞘层
化学气相沉积
Bi2S3
nanowire
sheath
chemical vapor deposition （CVD）
