摘要
Short gate-length High Electron Mobility Transistors (HEMTs) have been observed to exhibit kinks in their drain current-voltage (I-V) characteristics. To model this nonlinear effect, we present an effective approach that is easily incorporated into most existing empirical HEMT I-V models. This has been done by modifying the channel length modulation parameter to account for the kink effect. Moreover, the definitions of the left parameters in the original model will not be influenced, and the improved HEMT I-V model enhances its bias range of operation for which accuracy is maintained. The proposed modeling method is validated through DC/ Pulsed I-V as well as large-signal power measurements.
Short gate-length High Electron Mobility Transistors （HEMTs） have been observed to exhibit kinks in their drain current-voltage （I-V） characteristics. To model this nonlinear effect, we present an effective approach that is easily incorporated into most existing empirical HEMT I-V models. This has been done by modifying the channel length modulation parameter to account for the kink effect. Moreover, the definitions of the left parameters in the original model will not be influenced, and the improved HEMT I-V model enhances its bias range of operation for which accuracy is maintained. The proposed modeling method is validated through DC/ Pulsed I-V as well as large-signal power measurements.
