期刊文献+

基于光谱椭偏术的Si球表面氧化层厚度测量 被引量:1

Thickness measurement of the oxide layer on the silicon sphere by spectroscopic ellipsometry
原文传递
导出
摘要 为改善X射线晶体密度法测得的阿伏伽德罗常数的标准不确定度,研制了一种基于光谱椭偏术和二维Si球扫描机构的Si球表面氧化层厚度自动扫描测量系统,用于测量直径约93.6 mm、质量约1 kg的单晶Si球表面氧化层平均厚度。用本文系统对标准Si球表面进行400点扫描测量实验,得到氧化层厚度分布,且测得其平均厚度为6.00(22)nm。测量结果可将由氧化层导致的阿伏伽德罗常数测量相对不确定度降低至2.5×10-8。 In order to improve the standard uncertainty of Avogadro constant determined by the X-ray crystal density method,an automatic scanning measurement system based on the spectroscopic ellipsometry and the two-dimensional silicon(Si) sphere scanning mechanism is proposed,which is used for determining the thickness of the oxide layer on a single crystal silicon sphere with the diameter of 93.6 mm and the mass of 1 kg approximately.By measuring the oxide layer thickness at 400 points on the standard silicon sphere,the thickness distribution of the oxide layer is obtained and the mean thickness is 6.00(22) nm.The relative standard uncertainty of Avogadro constant caused by the uncertainty of the oxide layer thickness can be reduced down to 2.5×10-8.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2011年第9期1376-1379,共4页 Journal of Optoelectronics·Laser
基金 清华大学自主科研计划资助项目(2009THZ06057)
关键词 测量 氧化层 光谱椭偏 扫描机构 Si球 measurement oxide layer spectroscopic ellipsometry scanning mechanism silicon(Si) sphere
  • 相关文献

参考文献15

  • 1罗志勇.质量自然基准的研究进展及发展方向[J].计量学报,2004,25(2):138-141. 被引量:27
  • 2李岩,张继涛,罗志勇.阿伏加德罗常数测量与千克重新定义[J].科学通报,2011,56(10):717-724. 被引量:11
  • 3Andreas B, Azuma Y, Bartl G, et al. Determination of the Avogadro constant by counting the atoms in a 28 Si crystal[J]. Physical Review Letters, 2011,106(3) : 030801.
  • 4Andreas B,Azuma Y, Bartl G, et al. Counting the atoms in a ^28Si crystal for a new kilogram definition[J]. Metrologia, 2011,48 : 1-13.
  • 5Nicolaus R,Fujii K. Primary calibration of the volume of silicon spheres[J]. Measurement Science and Technology, 2006, 17 (10) :2527-2539,.
  • 6Naoki Kuramoto, Kenichi Fujii, Yasushi Azuma, et al. Density determination of silicon spheres using an interferometer with optical frequency tuning[J]. IEEE Transactions on Instrumentation and Measurement,2007,56(2):476-480.
  • 7Bartl G, Bettin H, Krystek M, et al. Volume determination of the Avogadro spheres of highly enriched ^28Si with a spherical Fizeau interferometer[J]. Metrologia, 2011,48: 96-103.
  • 8Kuramoto N, Fujii K, Yamazawa K,et al. Volume measurements of 28 Si spheres using an interferometer with a flat etalon to determine the Avogadro constant [J]. Metrologia, 2011,48: 83-95.
  • 9杨坤,王向朝,步扬.椭偏仪的研究进展[J].激光与光电子学进展,2007,44(3):43-49. 被引量:20
  • 10徐均琪,冯小利.多层薄膜光学常数的椭偏法研究[J].光电工程,2009,36(2):29-33. 被引量:17

二级参考文献109

共引文献80

同被引文献18

  • 1梁培.离轴抛物镜准直特性的研究[J].光学学报,2006,26(6):909-913. 被引量:15
  • 2Aspnes D E. Above-bandgap optical anisotropies in cubicsemiconductors: A visible-near ultraviolet probe of sur-faces[J]. J. Vac. Sci. Technol.'B,1985,3(5) :1498-1506.
  • 3Weightman P,Martin D S,Cole R J,et al. Reflection ani-sotropy spectroscopy[J]. Rep. Prog. Phys. ,2005,68(6):1251-1341.
  • 4Wu X J,Zhang J T,Li Y,et al. Thickness measurement ofthe oxide layer on the silicon sphere by spectroscopic el-lipsometry[J]. Journal of Optoelectronics . Laser, 2011,22(9):1376-1379.
  • 5Harrison P, Farrell T, Maunder A, et al. A rapid reflec-tance anisotropy spectrometer[J]. Meas. Sci. Technol.,2001,12(12) :2185-2191.
  • 6Kaspari C, Pristovsek M, Richter W. A fast reflectanceanisotropy spectrometer for in-situ growth monitoring[J]. Phys. Stat. Sol. (B) ,2005,242:2561-2569.
  • 7Nunez-Olvera 0,Balderas-Navarro R E,Ortega-GallegosJ,et al. A rapid reflectance-difference spectrometer forreal-time semiconductor growth monitoring with sub-sec-ond time resolution[J]. Rev. Sci. Instrum.,2012,83(10):103109.
  • 8Hu C G,Sun L D,Flores-Camacho J M,et al. A rotating-compensator based reflectance difference spectrometerfor fast spectroscopic measurements [ J]. Rev. Sci. In-strum. ,2010,81(4).043108.
  • 9Hu C G,Sun L D,Zeppenfeld P,et al. Impact of lamp in-stability on rotating compensator based ellipsometry[A].Proc. of International Conference on Optical Instrumentsand Technology: Optical Systems and Modern Optoelec-tronic 丨nstnjments[C]. 2009,7506:750617.
  • 10Smith W J. Modern optical engineering-the design of opti-cal systems [M]. 4th edition), NewYork: McGraw-Hill,2007.

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部