期刊文献+

量子点太阳电池研究进展 被引量:2

Advance in quantum dot solar cells
在线阅读 下载PDF
导出
摘要 分析了量子点太阳电池的物理机理。详细阐述了提高量子点太阳电池光电转换效率的两个效应:第一个效应是来自具有充足能量的单光子激发产生多激子;第二个效应是在带隙里形成中间带,可以有多个带隙起作用,来产生电子空穴对。综述了近年来量子点太阳电池材料和器件的研究进展,并对几个有待于进一步研究的问题进行展望。 The physical mechanism of quantum dot solar cells was analyzed.The two effects:(1) the production of multiple excitons from a single photon of sufficient energy and(2) the formation of intermediate bands in the bandgap that used sub-bandgap photons to form separable electron-hole pairs,which could increase the photon conversion efficiency were expounded in detail.The progress of materials and device for quantum dot solar cells was reviewed,and furthermore,some new problems which remained unsolved were prospected.
出处 《电源技术》 CAS CSCD 北大核心 2011年第8期1019-1024,共6页 Chinese Journal of Power Sources
关键词 量子点 太阳电池 多激子 中间带 quantum dot solar cells multiple excitons intermediate bands
  • 相关文献

参考文献30

  • 1SHOCKLEY W,QUEISSER H J.Detailed balance limit of efficiency of p-n junction solar cells[J]. J Appl Phys, 1961, 32 (3): 510-519.
  • 2HUBBARD S M, BAILEY C G, AGUINALDO R, et al. Characteri- zation of quantum dot enhanced solar cells for concentrator photo- voltaics [C]//34th IEEE Photovoltaic Specialists Conference. Penn- sylvania USA: IEEE Piscataway, 2009: 000090-000095.
  • 3LUQUE A, MARTI A, NOZIK A J. Solar Cells Based on Quantum Dots[J]. MRS bulletin, 2007, 32: 236-241.
  • 4NOZIK A J. Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots[J].Annu Rev Phys. Chem., 2001, 52 (1): 193-231.
  • 5BUDE J, HESS K. Thresholds of impact ionization in semiconduc- tors[J]. J Appl Phys, 1992, 72 (8): 3554-3561.
  • 6JUNG H K, TANIGUCHI K, HAMAGUCH C. Impact ionization model for full band Monte Carlo simulation in GaAs [J]. J Appl Phys, 1996, 79(5): 2473-2480.
  • 7HARRISON D, ABRAM R A, BRAND S. Characteristics of impact ionization rates in direct and indirect gap semiconductors[J].J Appl Phys, 1999, 85(12): 8186-8192.
  • 8CHRISTENSEN O. Quantum efficiency of the internal photoelectric effect in silicon and germanium[J]. J Appl Phys, 1976, 47(2): 689- 695.
  • 9WOLF M, BRENDEL R, WERNER J H, et al. Solar cell efficiency and carrier multiplication in Sil?xGex alloys[J].J Appl Phys, 1998, 83 (8): 4213-4221.
  • 10ELLINGSON R J, BEARD M C, JOHNSON J C, et al. Highly ef- ficient multiple exciton generation in colloidal PbSe and PbS quan- tum dots[J]. Nano Lett, 2005, 5(5): 865-871.

同被引文献16

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部