摘要
利用蒙特卡洛软件GEANT4模拟了质子对半导体Si材料的位移损伤效应的能量损失。根据反冲原子的能量,引入反冲原子能量Lindhard-Robinson-Akkerman分离函数,模拟结果表明10 MeV-1 GeV能量范围内的质子位移能量损失值和Jun、Summers等结果吻合较好。
In this paper,the displacement damage of energetic protons in semiconductor material of silicon is simulated using the MC software of GEANT4.The results shows a good agreement of proton NIEL（non-ionizing energy loss） value in the proton energy range from 10 MeV to 1 GeV with Jun et al and Summers/Burke et al.,who applied the Lindhard-Robinson-Akkerman partitioning functions according to energy of the recoil atoms.
出处
《核技术》
CAS
CSCD
北大核心
2011年第7期529-531,共3页
Nuclear Techniques
