摘要
高压直流输电(HVDC)换流阀屏蔽罩的寄生电容对换流系统的宽频电路性能有重大影响,快速准确地提取屏蔽罩电容参数是目前HVDC国产化需要掌握的关键技术之一。将间接边界元方法用于换流阀屏蔽罩寄生电容参数的提取,从场分析角度,提出了用平面模拟倒角曲面的模型简化方法。针对国内某直流换流站,建立了屏蔽罩倒角和不倒角的仿真模型,对比计算了不同倒角情况下的寄生电容,分析了倒角对电容参数的影响。计算结果表明,该模型简化方法保证了计算精度,降低了建模难度和计算代价,为大尺寸金属架构的电容计算提供了一种便捷、可行的方法。
The parasitic capacitance parameters are most essential for modeling the equivalent wide-band circuit model of converter system.A simplified modeling method of capacitance extraction based on boundary element method（BEM） is proposed.In the method presented,simulation model of the shield may not be chamfered.Consequently,the edge and corner of shield need not to be handled with sphere,cylinder and other curved surface.In addition to taking location into account,much more attention is paid to analyze the effect of chamfer on capacitance parameters.The availability of this modeling method is demonstrated by comparing the capacitance parameters of chamfered shield with that of non-chamfered shield.It provides a better trade-off between accuracy and efficiency and can be widely used in capacitance extraction of metal frameworks with large-size and complex structures.
出处
《电工技术学报》
EI
CSCD
北大核心
2011年第2期201-206,共6页
Transactions of China Electrotechnical Society
关键词
寄生电容
屏蔽罩
倒角
边界元
提取
Parasitic capacitance
shield
chamfer
BEM
extraction
