摘要
目前HVDC技术国产化过程中需要掌握的关键技术之一,是建立换流系统的宽频等效电路模型,分析阀塔过电压瞬态过程,而屏蔽罩寄生电容是宽频模型至关重要的参数,直接影响模型的正确性。为此,提出了一种基于间接边界元法的数值计算方法来计算屏蔽罩的寄生电容参数,在这种方法中,只需对导体表面进行剖分,无需离散整个场域,在求得导体表面法向电场强度后,即可得到导体系统的电容矩阵。针对国内某±500kV直流换流站,应用该方法提取了屏蔽罩寄生电容,通过对比计算,研究了不同阀层屏蔽罩对电容参数的影响,确定了计算实际屏蔽罩寄生电容的仿真模型。为换流阀塔等大尺寸复杂金属结构的电容参数计算提供了一种便捷、可行的方法。
It is necessary to establish a wide-band circuit model to study the transient process of overvoltage during the localization of HVDC technology.The parasitic capacitance is most essential for modeling the equivalent circuit,so a fast and accurate extraction of capacitance parameters plays an important role.A numerical method for parasitic capacitance parameters based on boundary element method was put forward.According to one converter substation in China,this method was applied to calculate the capacitances.The effect of shield in different layers on capacitance parameters was analyzed,and some regulations on simulation model were proposed to simplify the computation of parasitic capacitance.The method,which provides a better trade-off between accuracy and efficiency,is proved to be simple and satisfactory,and can be widely used in capacitance extraction of metal framework with large-size and complex structure in electrical engineering area.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2010年第12期2970-2975,共6页
High Voltage Engineering
关键词
寄生电容
屏蔽罩
边界元法
提取
模型
复杂结构
parasitic capacitance
shield
boundary element method
extraction
model
complex structure
