摘要
使用 Ｓ Ｔ Ｅ Ｍ、 Ｓ Ｅ Ｍ 观察了磷化镓晶片在切割、研磨等工艺过程中引入的损伤。切片损伤层深度约３０３ μｍ ， 磨片损伤层深度小于２０ μｍ 。还观察到一些磷化镓单晶锭局部表面布满麻坑， 认为这是单晶生长时， 磷挥发造成的。同时离晶体表面１００ ～１５０ μｍ 范围内有镓凝聚物， 是磷挥发后造成镓过剩并聚集在一起形成的。
Abstract: The observation of damage on GaP wafer caused by slicing and lapping with STEM and SEM as well as the lapping and polishing experiments was elucidated. The results show that the thickness of damaged layer of sliced and lapped wafer are 30.3 μm and less than 20 μm, respectively. Some pits on surface of GaP crystal produced by vaporization of phosphorus were observed. Some gallium drops in range of 100～150 μm from the surface of crystal can be found because phosphorous vaporizes and leaves gallium to be rich and aggregative.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1999年第5期340-343,共4页
Chinese Journal of Rare Metals
