摘要
针对某片上集成开关线式MEMS移相器设计了一款串联接触式悬臂梁开关。该移相器要求结构紧凑,工作频段为X波段,工作电压低于27V。利用Ansoft HFSS软件仿真分析了开关关键结构参数对电磁性能的影响,包括传输线断开间距d,接触金属与传输线之间的垂直间距h,接触金属的宽度B,总结了各参数对开关电磁性能的影响趋势,确定了本设计中各结构参数的最优取值;利用MEMS CAD软件CoventorWare对初始设计的开关进行机电耦合仿真,确定了开关的详细结构参数。仿真结果表明,设计的串联接触式悬臂梁开关驱动电压约为18V;中心频率为10GHz时,开关闭合态回波损耗为0.02dB,隔离度为36dB,导通态下,插入损耗为0.028dB。
A series contact cantilever RF MEMS switch was designed for a on-chip integrated switch-line MEMS phase shifter.The switch-line MEMS phase shifter is used in X-band,the threshold voltage is lower than 27 V,and the area of the switch-line MEMS phase shifter is very small.Therefore,the designed contact cantilever RF MEMS series switch must have a compact structure.The key structural parameters affecting on the electromagnetic properties,including the distance（d）of the disconnected transmission line,the vertical space（h）between the contact metal sheet and transmission line and the width（B）of the contact metal sheet,were analyzed by Ansoft HFSS software.The influence trends of these parameters on the electromagnetic properties of the switch were summarized and the optimal values of the structural parameterso for the designed contact cantilever RF MEMS series switch were determined.The MEMS CAD software of CoventorWare was utilized to simulate the electromechanical coupling of the preliminary design for the switch.The detailed structure parameters of the switch were determined by the electromechanical coupling analysis.Simulation results demonstrate that the driving voltage of the series contact cantilever RF MEMS switch is about 18 V.When the center frequency is 10 GHz,the return loss of the up-state switch is 0.02 dB and the isolation is 36 dB,and the insertion loss of the down-state switch is 0.028 dB.
出处
《微纳电子技术》
CAS
北大核心
2010年第12期762-769,共8页
Micronanoelectronic Technology
基金
中国工程物理研究院科技发展基金重点课题(2008A0403016)
四川省教育厅重大培育项目(07ZZ038)
西南科技大学研究生教改项目(2007XJJG33)
教育部访问学者基金(无编号)
